穿透硅通孔(through silicon via,TSV)技术采用铜作为互连材料,晶圆表面沉积了一层厚厚的铜膜,对铜去除速率提出了新要求。从化学机械平坦化(CMP)过程的机理出发,对影响铜去除速率的因素,如磨料、活性剂、氧化剂、螯合剂以及抛光工艺中抛头转速、转盘转速、抛光液流量、工作压力进行了单因素实验和规律分析。通过单因素实验得出,在磨料、活性剂、氧化剂和螯合剂的体积分数分别为50%,1.5%,0.5%和5%,抛头转速和转盘转速分别为105和100 r/min、抛光液流量为225 mL/min和工作压力为4 psi(1 psi=6 895 Pa)时,铜去除速率高达1.5μm/min。 Through silicon via (through silicon via, TSV) technology uses copper as the interconnect material, deposited a thick copper film on the wafer surface, the copper removal rate has put forward new requirements. Based on the mechanism of chemical mechanical planarization (CMP), the influence factors of copper removal rate, such as abrasive, active agent, oxidant, chelating agent, polishing speed, turntable rotation speed, polishing liquid flow rate and working pressure Single factor experiment and regular analysis. The results of single factor experiments show that when the volume fraction of abrasive, active agent, oxidant and chelating agent is 50%, 1.5%, 0.5% and 5% respectively, the speed of throwing head and the speed of rotating disk are respectively 105 and 100 r / min. The copper removal rate is up to 1.5μm / min at a flow rate of 225 mL / min and a working pressure of 4 psi (1 psi = 6 895 Pa).