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We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors(TFTs).Low Ga-doped(0.7wt％)ZnO thin films were deposited on SiO2
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We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors(TFTs).Low Ga-doped(0.7wt％)ZnO thin films were deposited on SiO2/p-Si substrates by rf magnetron sputtering.The GZO TFTs show a mobility of 1.76cm2/V.s,an on/off ratio of 1.0 × 106,and a threshold voltage of 35 V.The time-dependent instability of the TFT is studied.The VTH shifts negatively.In addition,the device shows a decrease of the on/off ratio,mainly due to the increase of the off-current.The mechanisms of instability are discussed.
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