采用5·cm的p型单晶硅,通过在高温下扩散金属锰的方法,可以得到高补偿硅。笔者选择没有光照下,室温电阻率为5.84×104·cm的样品,进行测量电阻随温度的变化关系(温度从77 K上升到300 K)。测试结果表明:在没有光照条件下测试时,电阻随温度的变化同普通的半导体;但在受到光照时,却出现极不相同的情况,这种不同,可能来自所掺杂的硅是一种光敏材料及掺入的杂质是一种深能级杂质。 Using 5 cm of p-type single crystal silicon, high-compensated silicon can be obtained by diffusing metallic manganese at a high temperature. In the absence of light, the author chose a sample with a room temperature resistivity of 5.84 × 104 · cm to measure the resistance versus temperature (temperature rise from 77 K to 300 K). The test results show that the resistance changes with temperature as the normal semiconductor when tested in the absence of light; however, very different conditions occur when exposed to light. This difference may result from the doped silicon being a Photosensitive materials and doped impurities is a deep level impurity.