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为了改善垂直腔面发射半导体激光器(VCSEL)的热特性,提高器件的输出功率,设计并制作了一种新型辐射桥结构VCSEL。利用有限元热分析软件ANSYS,模拟了常规结构和辐射桥结构VCSEL内部的热场分布和热矢量分布。经模拟得到,常规结构器件的热阻为4.13K/W,辐射桥结构的热阻为2.64K/W。而经实验测得,常规结构器件的热阻为4.40K/W,辐射桥结构器件的热阻为2.93K/W,实验测试结果与模拟结果吻合较好。同时测得,常规结构器件的最大输出功率为305mW,辐射桥结构器件的最大输出功率为430mW,后者的输出功率提高了40%。
In order to improve the thermal characteristics of the vertical cavity surface emitting semiconductor laser (VCSEL) and improve the output power of the device, a novel radiation bridge structure VCSEL is designed and fabricated. The finite element thermal analysis software ANSYS was used to simulate the thermal field distribution and thermal vector distribution in the VCSEL with conventional structure and radiation bridge structure. The simulation shows that the thermal resistance of the conventional structure device is 4.13K / W and the thermal resistance of the radiation bridge structure is 2.64K / W. The experimental results show that the thermal resistance of the conventional device is 4.40K / W and the thermal resistance of the radiation bridge device is 2.93K / W. The experimental results agree well with the simulation results. Measured at the same time, the maximum output power of the conventional structure device is 305mW, the maximum output power of the radiation bridge structure device is 430mW, and the latter output power is increased by 40%.