松下在慕尼黑电子展“electronica 2016”上,展示了GaN功率晶体管和该器件的应用实例。同时宣布,将开始量产耐压600V的GaN功率晶体管“PGA26E07BA”和“PGA26E19BA”。均采用8mm见方的DFN封装。还将开始量产支持该晶体管的栅极驱动IC“AN34092B”。这是松下第一次量产GaN功率晶体管产品。该公司于2013年3月开始样品供货耐压600V的GaN功率晶体管。此后不断在功率电子及功率器件相关 Panasonic at the Munich Electronics Show “electronica 2016 ” shows GaN power transistors and application examples of the device. At the same time, it announced that it will start mass production of 600V GaN power transistors “PGA26E07BA” and “PGA26E19BA”. Are used 8mm square DFN package. The gate driver IC “AN34092B ” will also begin mass production support for the transistor. This is Panasonic’s first mass production GaN power transistor products. The company began sampling samples in March 2013 with 600V GaN power transistors. Since then continue to be related to power electronics and power devices