本文提供了市场上称作QMOS的新的高速CMOS器件的可靠性试验资料。讨论了早期开发产品的可靠性特点;并给出了一万多个塑封器件在加速应力条件下经受鉴定和鉴定后的试验数据。所产生的数据证明最终的塑封产品可靠性极其良好,与很成熟的LSTTL工艺相比而言。所提供的数据还证明高速CMOS器件在机械和环境应力极限条件下稳定性很好。 This article provides reliability test data for the new high-speed CMOS devices on the market called QMOS. The reliability characteristics of early developed products were discussed. The experimental data of more than ten thousand plastic encapsulated devices under the condition of accelerated stress were given. The data generated demonstrates that the final molded product is extremely reliable, compared to the proven LSTTL process. The data provided also demonstrate the stability of high-speed CMOS devices under mechanical and environmental stress limits.