Novel ternary Cr2O3-SiC-TiO2 composites were synthesized by implanting Cr3+ into SiC-TiO2 via sol-gel and impregnation approaches.The results from X-ray diffraction,scanning electron microscopy and transmission electron microscopy show that the Cr3+ species were doped onto the surface of the SiC-TiO2 carrier.The diffuse reflectance ultraviolet-visible absorption spectra revealed that the absorption edges of the ternary Cr2O3-SiC-TiO2 composites were gradually shifted red with increasing chromium content.The luminescence intensities of the composites decreased with increasing doped Cr3+ content due to the reduction in the number of recombination sites of electron-hole pairs.The ternary Cr2O3-SiC-TiO2 composites showed high hydrogen-producing activities,which probably results from the formation of donor levels of the Cr3+ species in the forbidden band of the SiC semiconductor.