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从理论和实验的角度研究了n型4H-SiC上的多晶硅欧姆接触.在p型4H-SiC外延层上使用P+离子注入来形成TLM结构的n阱.使用LPCVD淀积多晶硅并通过P+离子注入及扩散进行掺杂,得到的多晶硅方块电阻为22Ω/□.得到的n+多晶硅/n-SiC欧姆接触的比接触电阻为3.82×10-5Ω.cm2,接触下的注入层的方块电阻为4.9kΩ/□.对n+多晶硅/n-SiC欧姆接触形成的机理进行了讨论.
Polysilicon ohmic contacts on n-type 4H-SiC were studied theoretically and experimentally. P-type ion implantation was used to form n-well of TLM structure on a p-type 4H-SiC epitaxial layer. Polycrystalline silicon was deposited by LPCVD and implanted by P + And diffusion, the resulting polycrystalline silicon sheet had a sheet resistance of 22 Ω / □ The specific contact resistance of the obtained n + polycrystalline silicon / n-SiC ohmic contact was 3.82 × 10 -5 Ω · cm 2, and the sheet resistance of the implanted layer under contact was 4.9 kΩ / □ The mechanism of n + polysilicon / n-SiC ohmic contact formation is discussed.