微波系统对功率放大用的硅功率晶体管的微波输出功率、增益、效率等性能指标提出了越来越高的要求。南京电子器件研究所先后在 P,L,S,C波段硅微波功率晶体管研究领域取得进展。最近又研制成功工作频率 2 .2～ 2 .4GHz,脉冲宽度 1 0 0μS,占空比 1 0 % ,输出功率大于 1 1 0 W,功 Microwave system for power amplification with silicon power transistor microwave output power, gain, efficiency and other performance indicators put forward higher and higher requirements. Nanjing Institute of Electronic Devices has P, L, S, C-band silicon microwave power transistor research progress. Recently, it has successfully developed the operating frequency of 2.2 ~ 2.4GHz, pulse width of 100μS, duty cycle of 10%, output power greater than 110 W, work