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通过设计极低损耗808nm半导体激光芯片外延结构,实现腔内损耗小于0.5cm~(-1)。采用该高效率外延结构研制出高峰值功率808nm巴条芯片,巴条的填充因子为85%,包含60个发光点,发光区宽度为140μm,腔长为2mm。在驱动电流为500A,脉冲宽度为200μs,重复频率为400 Hz,占空比为8%的工作条件下,该芯片的准连续(QCW)峰值输出功率为613 W,斜率效率达1.34 W/A,峰值波长为807.46nm,光谱半峰全宽为2.88nm。任意选取5只芯片,在准连续300 W(占空比8%)条件下进行了寿命验证,芯片寿命达到3.63×109 shot,定功率300W下电流变化小于10%,达到商业化水平。
By designing a very low loss 808nm semiconductor laser chip epitaxial structure, the cavity loss is less than 0.5cm ~ (-1). The high efficiency epitaxial structure was used to fabricate 808nm bar chip with peak power. The filling factor of bar was 85%, including 60 luminescent spots, the luminescent region width was 140μm and the cavity length was 2mm. The quasi-continuous (QCW) peak output power of the chip is 613 W with a slope efficiency of 1.34 W / A at a driving current of 500 A, a pulse width of 200 μs, a repetition frequency of 400 Hz and a duty cycle of 8% , The peak wavelength is 807.46nm, the full width at half maximum of the spectrum is 2.88nm. Choose 5 chips arbitrarily and verify the life under quasi-continuous 300 W (duty cycle 8%), the chip life is 3.63 × 109 shot, and the current change under 300W is less than 10%, achieving the commercialization level.