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研究了Ti3SiC2掺杂对MgB2的晶格参数(a)、微观结构、超导转变温度(Tc)和临界电流密度(Jc)的影响。随着Ti3SiC2掺杂量的增加,晶格参数a逐渐变小,表明了C进入晶格代替B位的发生。随着掺杂量的增加,超导转变温度Tc从37.15K降低到36.55K。利用Bean模型通过M-H磁滞回线计算了样品的Jc值。结果表明,在低场区域,未掺杂样品的Jc值高于Ti3SiC2掺杂样品的Jc值。然而随着磁场的进一步增大,适量掺杂的样品Jc值得到提高。
The effects of Ti3SiC2 doping on the lattice parameters (a), microstructure, superconducting transition temperature (Tc) and critical current density (Jc) of MgB2 were studied. With the increase of Ti3SiC2 doping amount, the lattice parameter a becomes smaller gradually, which indicates the occurrence of C into the lattice instead of the B site. With the increase of doping amount, the superconducting transition temperature Tc decreased from 37.15K to 36.55K. The Jc value of the sample was calculated by M-H hysteresis loop using the Bean model. The results show that the Jc value of undoped sample is higher than that of Ti3SiC2 doped sample in low field. However, with the further increase of the magnetic field, the Jc value of the moderately doped sample is improved.