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报道了采用改进的区熔工艺生长的三元系金属化合物半导体ＨｇＣｄＴｅ材料研制的短波光伏探测器．其工作温度为室温（３００Ｋ），在响应波段１．５８～１．６４μｍ内探测率优于３．０×１０１１ｃｍＨｚ１／２Ｗ－１，量子效率达７０％．暗电流主要受制于扩散电流与产生复合电流，器件经环境模拟试验，定标与联试，完全符合空间工程应用的要求．
The short-wave photovoltaic detector developed by the ternary system metal compound semiconductor HgCdTe grown by the improved zone melting process is reported. Its operating temperature is room temperature (300K), and its detection rate is better than 3.0 × 1011cmHz1 / 2W-1 in the 1.58 ~ 1.64μm response band with a quantum efficiency of 70%. Dark current is mainly subject to the proliferation of current and produce composite current, the device by environmental simulation test, calibration and joint test, in full compliance with the requirements of space engineering applications.