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去年秋天,日本松下电器公司东京研究所研制出了固体脉冲振荡器件“跳跃二极管”,开辟了GaAs材料的第三个用途。 GaAs脉冲振荡器“跳跃二极管”的构造示于图 1。在n型 GaAs上扩散深能级杂质铁,其表面形成高阻层。母晶的载流子浓度是n10~(15)～10~(16)厘米~(-3),扩散铁后的载流子浓度是10~(14)厘米~(-3),与扩散前相比,大约被补偿1个数量级左右,形成10微米厚的γ层。然后再蒸发In、Sn Au(Ge)等金属形成电极。
Last fall, Tokyo Institute of Japan's Matsushita Electric Industrial Co., Ltd. developed a solid pulse oscillation device “jumping diode”, opening up the third use of GaAs material. The structure of a GaAs pulse oscillator “jump diode” is shown in FIG. Diffusion of deep level impurity iron on n-type GaAs forms a high resistance layer on the surface. The carrier concentration of the mother crystal is n10 ~ (15) ~ 10 ~ (16) cm ~ (-3), and the carrier concentration after diffusion of iron is 10 ~ (14) cm ~ Is approximately compensated by about one order of magnitude to form a [gamma] layer of 10 [mu] m thick. Then evaporating In, Sn Au (Ge) and other metal to form the electrode.