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日本电气公司最近试制出600nm 波长的可见光半导体激光器,在室温下连续振荡获得成功。该激光器为 InGaAsP/InGaP 双异质结结构,是用两生长室的氢化物汽相外延法生长的.采用了热散性能好的台式条型的器件结构。
NEC recently experimented with a visible-light semiconductor laser of 600nm wavelength to achieve continuous oscillations at room temperature. The laser is an InGaAsP / InGaP double heterojunction structure, which is grown by hydride vapor phase epitaxy with two growth chambers, and adopts a mesa-type device structure with good thermal dissipation performance.