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500 nm SiO2 films were prepared on (111) facet of p-type single silica crystals by use of wet oxidation of silica substrate, andimplanted at room temperature (RT) with 120keV carbon ionsto doses from 5.0×1016 to 6.5×1017 C-ions/cm2. The C-dopedsamples w
500 nm SiO2 films were prepared on (111) facet of p-type single silica crystals by use of wet oxidation of silica substrate, and implanted at room temperature (RT) with 120 keV carbon ionsto doses from 5.0 × 1016 to 6.5 × 1017 C-ions / cm2. The C-dopedsamples w