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A uniaxial magnetic anisotropy Co film was grown on a single-crystal Ba Ti O3(BTO) substrate. The strain yielded by the voltage-induced ferroelastic domain switching in the BTO substrate was recorded by atomic force microscope and modulated the magnetism of the Co film. The manipulation of the magnetism of the Co film is experimentally demonstrated by voltage dependence of magnetic hysteresis loops measured via magneto-optic Kerr effect.
The strain was shielded by voltage-induced ferroelastic domain switching in the BTO substrate was recorded by atomic force microscope and modulated the magnetism of the Co film The manipulation of the magnetism of the Co film is experimentally demonstrated by voltage dependence of magnetic hysteresis loops measured via magneto-optic Kerr effect.