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本文描述了对n一型锗进行阳极氧化的实验方法,得到了均匀的各种不同厚度的G_eO_2薄膜,采用了二种电解液:(1)醋酐65c.c.加上无水醋酸钠在醋酐中的饱和溶液5c、c;(2)醋酐500c、c加上21mgLiNO_3,实验证明采用后者得到较好的薄膜。膜的厚度测量是用光的干涉法得出。文章还叙述了阳极电位与时间的关系,氧化层厚度与时间的关系等规律,指出用这种方法可进行Ge扩散层中杂质浓度分布的研究,用适宜的条件,可以生长非常均匀的厚度达1000A以上的薄膜。
In this paper, an experimental method for anodizing n-type germanium has been described. Different kinds of G_eO_2 thin films with different thickness have been obtained. Two electrolytes are used: (1) acetic anhydride 65c.c. with anhydrous sodium acetate Acetic anhydride in the saturated solution 5c, c; (2) acetic anhydride 500c, c plus 21mgLiNO_3, experiments show that the latter to get a better film. The thickness of the film is measured using light interferometry. The article also describes the relationship between anodic potential and time, the relationship between the thickness of the oxide layer and the time, and so on. It is pointed out that this method can be used to study the impurity concentration distribution in the Ge diffusion layer. With suitable conditions, the uniform thickness 1000A or more of the film.