利用扫描电子显微镜和接触式表面形貌仪分析了IC1000/Suba-IV和IC1010两种商用抛光垫的主要特性,并通过自行研制的超低压力化学机械抛光(CMP)试验机、四探针测试仪和三维白光干涉仪等研究了这两种抛光垫对300 mm晶圆铜互连的CMP材料去除率、片内非均匀性、碟形凹陷和腐蚀的影响规律.结果表明:IC1010比IC1000的硬度低、压缩率高、粗糙度大,IC1000为网格状沟槽、沟槽较宽、分布较稀,IC1010为同心圆沟槽、沟槽较细、分布较密;相同条件下IC1010比IC1000的材料去除率大、片内非均匀性好;在相同线宽下IC1000与IC1010的腐蚀几乎一致,IC1010的碟形凹陷比IC1000的略大. The main characteristics of two commercially available polishing pads, IC1000 / Suba-IV and IC1010, were analyzed by scanning electron microscope and contact surface profilometer, and the results were analyzed by a self-developed ultra-low pressure chemical mechanical polishing (CMP) Instrument and three-dimensional white light interferometer, etc. The effects of these two kinds of polishing pads on CMP material removal, in-chip nonuniformity, dishing and corrosion of 300 mm wafer copper interconnects were studied.The results show that: Low hardness, high compression rate, coarse roughness, IC1000 for the grid-shaped trench, wide trench, the distribution of more dilute, IC1010 concentric grooves, trenches smaller, densely distributed; under the same conditions IC1010 than IC1000 Of the material removal rate, on-chip non-uniformity is good; under the same line width IC1000 and IC1010 corrosion is almost the same, IC1010 dished depression slightly larger than the IC1000.