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利用电化学阳极氧化法,通过控制电流密度和电解液的成分,在p型(100)硅衬底上制备了大孔的多孔硅结构,利用X射线衍射仪、扫描电子显微镜和紫外荧光光度计研究了不同条件下制备的多孔硅样品的行貌特征、结构和发光性能。在此基础上进一步考察了对多孔硅样品进行氢氟酸浸泡刻蚀和阴极氢饱和处理对其发光性能的影响。讨论了后处理对多孔硅发光性能影响的机理。
The porous structure of macroporous silicon was prepared on p-type (100) silicon substrate by controlling the current density and the composition of the electrolyte by electrochemical anodic oxidation. X-ray diffractometry, scanning electron microscopy and ultraviolet fluorescence spectrophotometer Morphology, structure and luminescent properties of porous silicon samples prepared under different conditions were studied. Based on this, the influence of hydrofluoric acid immersion etching and cathodic hydrogen saturation on the luminescence properties of porous silicon samples was further investigated. The mechanism of post-treatment on the luminescent properties of porous silicon was discussed.