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采用金属有机化学气相淀积(MOCVD)法在InP衬底上低温生长6个周期的InGaAsP多量子薄膜,薄膜对1.06μm激光的小信号透过率为23%。该薄膜兼作Nd:YAG激光器的可饱和吸收体及耦合输出镜,实现1.064μm激光的被动锁模运转,获得平均脉宽23 ps,能量15 mJ的单脉冲序列。采用射频磁控溅射法在石英衬底上制备4个周期的Si/SiNx多量子阱薄膜,样品在氮气环境下以1000℃退火30 min后,插入Nd:YAG激光器腔内,实现1.064μm激光的被动锁模,获得脉宽30 ps的脉冲序列。多量子阱半导体薄膜作为可饱和吸收体实现激光器的被动锁模具有成本低、设计和制作简单、运转稳定和使用方便的优点。
Six-period InGaAsP multi-quantum films were grown on InP substrate by metal organic chemical vapor deposition (MOCVD). The small signal transmittance of the film to 1.06μm laser was 23%. The film doubles as a saturable absorber and a coupling output mirror of a Nd: YAG laser to achieve a passive mode-locked operation of a 1.064μm laser and obtain a single pulse sequence with an average pulse width of 23 ps and an energy of 15 mJ. Four cycles of Si / SiNx multiple quantum well thin films were prepared on a quartz substrate by RF magnetron sputtering. The samples were annealed at 1000 ℃ for 30 min in nitrogen atmosphere and inserted into the Nd: YAG laser cavity to achieve 1.064μm laser Passive mode-locked, pulse width 30 ps pulse sequence. Multi-quantum well semiconductor thin film as a saturable absorber to achieve passive laser mode-locking has the advantages of low cost, simple design and fabrication, stable operation and convenient use.