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采用射频(rf)激发,在热丝化学气相沉积(HWCVD)制备微晶硅薄膜的过程中产生发光基元,测量了rf激发HWCVD(rf-HWCVD)的光发射谱,比较了相同工艺条件下rf-HWCVD和等离子体增强CVD(PECVD)的光发射谱,分析了rf功率、热丝温度和沉积气压对rf-HWCVD光发射谱的影响.结果表明,在射频功率<0.1W/cm2时,rf-HWCVD发射光谱反映了HWCVD高的气体分解效率和高浓度原子氢的特点,能够解释气压变化与微晶硅薄膜微结构的关系,是研究HWCVD气相过程的有效方法之一.
The rf excitation was used to generate the light-emitting element during the preparation of the microcrystalline silicon film by hot filament chemical vapor deposition (HWCVD). The light emission spectra of rf-HWCVD (rf-HWCVD) were measured and compared under the same process conditions rf-HWCVD and plasma-enhanced CVD (PECVD) were used to investigate the influence of rf power, hot wire temperature and deposition pressure on rf-HWCVD optical emission spectrum.The results show that at RF power <0.1W / cm2, The rf-HWCVD emission spectrum reflects the high gas decomposition efficiency and the high concentration of atomic hydrogen in the HWCVD. The rf-HWCVD emission spectrum can explain the relationship between the pressure variation and the microstructure of the microcrystalline silicon film and is one of the effective methods for studying the gas phase process of the HWCVD.