介绍了LPIN二极管及其在硅基等离子天线方面的应用,从理论上分析了LPIN二极管自加热效应及其对本征区载流子浓度的影响。仿真分析了不同SOI埋层材料对LPIN二极管本征区载流子浓度的影响。仿真结果显示,LPIN二极管的自加热效应会降低其本征区载流子浓度,通过改变埋层的材料,增加埋层的热导率,可以减弱自加热效应,从而增加本征区载流子浓度,提高硅基等离子天线效率。 The LPIN diode and its application in silicon-based plasma antenna are introduced. The self-heating effect of LPIN diode and its influence on the carrier concentration in intrinsic region are theoretically analyzed. The effects of different SOI buried layers on the carrier concentration in the intrinsic region of LPIN diode were simulated. Simulation results show that the self-heating effect of LPIN diode decreases the intrinsic carrier concentration. By changing the material of the buried layer and increasing the thermal conductivity of the buried layer, the self-heating effect can be weakened and the intrinsic region carriers can be increased Concentration, improve the efficiency of silicon-based plasma antenna.