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随着集成电路线宽变窄,要求铜互连表面具有更低的表面粗糙度,对化学机械抛光(CMP)技术提出更高的要求。采用聚苯乙烯(PS)-二氧化硅(SiO2)复合颗粒作为铜层CMP的抛光磨粒,研究出PS-SiO2核壳结构的形成条件,分析新型抛光液体系中各颗粒含量、pH值等因素对Cu抛光效果的影响,通过X射线光电子能谱(XPS)、扫描电镜(SEM)等手段探讨其中的抛光机制和颗粒残留等问题。结果表明:较之PS、SiO2颗粒抛光液,复合颗粒抛光液抛光Cu后,获得更大的去除和更好的表面质量,且与抛光过程中摩擦因数的关系相符合。
As IC lines become narrower, lower surface roughness is required for copper interconnect surfaces, placing higher demands on chemical mechanical polishing (CMP) technology. The formation conditions of PS-SiO2 core-shell structure were studied by using polystyrene (PS) -silica (SiO2) composite particles as polishing abrasive grains for copper CMP. The content of each particle in the novel polishing solution, pH, etc. were analyzed Factors affecting the polishing effect of Cu were discussed by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to investigate the polishing mechanism and the residual particles. The results show that compared with PS and SiO2 particles polishing solution, the composite particles polishing solution after polishing Cu, get more removal and better surface quality, and with the polishing process the friction factor is consistent.