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采用射频磁控溅射法在Si衬底上制备了高c轴择优取向的ZnO薄膜,研究了退火对ZnO薄膜的晶粒尺度和发光光谱的影响。XRD结果显示退火可以改善ZnO薄膜的结构特性,PL谱结果显示退火对ZnO薄膜的发光强度产生很大影响。
ZnO films with high c-axis preferred orientation were prepared on Si substrates by RF magnetron sputtering. The effects of annealing on the grain size and the luminescence spectra of ZnO thin films were investigated. XRD results show that the annealing can improve the structural properties of ZnO thin films. The results of PL spectra show that annealing has a great effect on the luminescence intensity of ZnO thin films.