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Thin films of tin selenide(Sn_xSe_y) with an atomic ratio of r =[y/x]= 0.5,1 and 1.5 were prepared on a glass substrate at T = 470℃using a spray pyrolysis technique.The initial materials for the preparation of the thin films were an alcoholic solution consisting of tin chloride(SnCl_4·5H_2O) and selenide acide(H_2SeO_3).The prepared thin films were characterized by X-ray diffraction(XRD),scanning electron microscopy,scanning tunneling microscopy,scanning helium ion microscopy,and UV-vis spectroscopy.The photoconductivity and thermoelectric effects of the Sn_xSe_ythin films were then studied.The Sn_xSe_y thin films had a polycrystalline structure with an almost uniform surface and cluster type growth.The increasing atomic ratio of r in the films,the optical gap,photosensitivity and Seebeck coefficient were changed from 1.6 to 1.37 eV,0.01 to 0.31 and -26.2 to—42.7 mV/K (at T = 350 K),respectively.In addition,the XRD patterns indicated intensity peaks in r = 1 that corresponded to the increase in the SnSe and SnSe_2 phases.
Thin films of tin selenide (Sn_xSe_y) with an atomic ratio of r = [y / x] = 0.5, 1 and 1.5 were prepared on a glass substrate at T = 470 ° C using a spray pyrolysis technique. The initial materials for the preparation of The thin films were an alcoholic solution consisting of tin chloride (SnCl_4 · 5H_2O) and selenide acide (H_2SeO_3). The prepared thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy, scanning tunneling microscopy, scanning helium ion microscopy , and UV-vis spectroscopy. The photoconductivity and thermoelectric effects of the Sn_xSe_ythin films were then studied. The Sn_xSe_y thin films had a polycrystalline structure with an almost uniform surface and cluster type growth. The increasing atomic ratio of r in the films, the optical The photosensitivity and Seebeck coefficients were changed from 1.6 to 1.37 eV, 0.01 to 0.31 and -26.2 to-42.7 mV / K (at T = 350 K), respectively. In addition, the XRD patterns showed intensity peaks in r = 1 that corresponded to t he increase in the SnSe and SnSe_2 phases.