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随着半导体激光器在工业、军事、核能等领域的应用越来越多,单个迭阵输出的光功率密度已经不能满足实际的需求,这就需要将多个半导体激光迭阵的光束耦合成为一个共同的光束,以提高输出功率和亮度。所以采用怎样的光束耦合技术能实现高亮度、高质量的激光输出就成了一个关键性的问题。对于该技术的研究,国内还没有实验方面的报道。主要介绍了大功率半导体激光器偏振耦合原理、实验的技术路线,以及对808 nm半导体激光迭阵进行耦合实验的结果及分析。对2个bar、功率为40 W/bar的808 nm连续半导体激光迭阵,实现偏振耦合的总效率超过90%,聚焦得直径为3 mm光斑,输出功率达到134 W,总体效率超过84%。对7个bar、峰值功率100 W/ba、r占空比20%的808 nm准连续半导体激光迭阵进行了偏振耦合,其效率达到67%,得到4.5 mm×4.5 mm的光斑。
With the increasing use of semiconductor lasers in the fields of industry, military and nuclear energy, the optical power density of a single stacked array can no longer meet the actual needs. Therefore, it is necessary to couple a plurality of laser lasers stacked together into a common Beam to improve output power and brightness. Therefore, what kind of beam coupling technology can be used to achieve high brightness, high quality laser output has become a key issue. For the study of this technology, there is no experimental report in China. This paper mainly introduces the principle of polarization coupling of high power semiconductor lasers, the technical route of experiments and the coupling experiment results of 808 nm semiconductor laser. For a 2 bar, 80-nm continuous semiconductor laser with a power of 40 W / bar, the total efficiency of the polarization coupling is over 90%, the spot diameter is 3 mm, the output power reaches 134 W, and the overall efficiency exceeds 84%. Polarization coupling was performed on a series of 808 nm quasi-continuous semiconductor laser stacks with 7 bar, 100 W / ba peak power and 20% duty cycle. The efficiency was 67% and the spot size was 4.5 mm × 4.5 mm.