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We report on the Au-assisted vapour-liquid-solid(VLS) growth of GaAs/InxGa1-xAs/GaAs(0.2 ≤ x ≤ 1) axial double-heterostructure nanowires on GaAs(111) B substrates via the metal-organic chemical vapor deposition(MOCVD) technique.The influence of the indium(In) content in an Au particle on the morphology of nanowires is investigated systematically.A short period of pre-introduced In precursor before the growth of InxGa1-xAs segment,coupled with a group III precursor interruption,is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section.The nanowire morphology,such as kinking and tapering,are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.
We report on the Au-assisted vapor-liquid-solid (VLS) growth of GaAs / InxGa1-xAs / GaAs (0.2 ≦ x ≦ 1) axial double-heterostructure nanowires on GaAs deposition (MOCVD) technique. The influence of the indium (In) content in an Au particle on the morphology of nanowires is investigated systematically. A short period of pre-introduced In precursor before the growth of InxGa1-xAs segment, coupled with a group III precursor interruption, is conducive to gain symmetrical heterointerfaces as well as the desired In / Ga ratio in the InxGa1-xAs section. Nanowire morphology, such as kinking and tapering, are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.