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用D-~3He核反应分析法分析中发生器用TiD_(?)靶中D的含量x.并利用Au-Si面垒探测器测量了质子能谱,获得了该探测器的灵敏层参量,仔细研究了半导体探测器对高能质子的响应.对质子射程同耗尽层厚度相当时的质子能谱进行的理论计算与实验现象一致.
The content of D in TiD_ (?) Target in the generator was analyzed by D- ~ 3He nuclear reaction analysis method. The proton energy spectrum was measured by Au-Si surface-barrier detector and the sensitive layer parameters of the detector were obtained. The response of the semiconductor detector to high-energy proton is consistent with the theoretical calculation of the proton energy spectrum when the proton range is the same as the depletion layer thickness.