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据日本《电子材料》1988年第9期报道,日立制作所首先在世界上研制成功采用超导铌电极和在同一硅片上具有0.1μm栅长的氧化物绝缘栅的场效应超导晶体管。为了制作超导晶体管,首先在硅衬底上设计一个用薄氧化物作为绝缘的蘑菇状的特殊栅电极,再在其上进行浅的As离子注入,以形成显示金属电子传导的两个薄层,而渗入硅中的超导电子波很容易用电场效应来控制,距离必须接近0.1μm,已用电子束扫描技术制成0.1μm的微小绝缘栅电极。在硅表面清洗后,再在上面蒸发超导金属的铌薄膜,形成源漏两个超导电极。这种超导晶体管的开关速度为5ps(计算值),耗散功率为数μW,其器件性能可与约瑟夫逊结器件相匹敌。另外,因制成和MOS相同的结构,高集成化也是可能的。
According to Japan’s “Electronic Materials” No. 9, 1988 report, Hitachi first developed in the world using superconducting niobium electrode and the same silicon oxide gate insulator with a 0.1μm gate field effect superconducting transistor. To fabricate a superconducting transistor, a special mushroom-like gate electrode made of thin oxide is first insulated from the silicon substrate, and shallow As ions are implanted thereon to form two thin layers that exhibit metal electron conduction The superconducting electron waves infiltrated into the silicon are easily controlled by the electric field effect. The distance must be close to 0.1 μm and the tiny insulated gate electrode of 0.1 μm has been made by the electron beam scanning technique. After the silicon surface is cleaned, the niobium film of the superconducting metal is evaporated on the surface to form two superconducting electrodes of source and drain. The superconducting transistor, which switches at 5ps (calculated) and dissipates several μW in power, is comparable in performance to a Josephson junction device. In addition, high integration is also possible due to the same structure as the MOS.