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通过变温 (10— 30 0K)暗电流特性研究了射频磁控溅射法生长在半绝缘GaAs (111)衬底上的六方InN薄膜的载流子输运过程 .在晶界势垒模型的基础上 ,发现InN薄膜的电导特性取决于材料内部的晶界势垒高度 ,载流子输运特性是由于空穴在晶界处的积累决定的 .从获得的InN薄膜晶界势垒高度 ,可以估算出InN薄膜内的缺陷浓度 ,结果与显微拉曼散射实验结果相一致 ,这进一步说明了晶界势垒模型适用于描述InN中的载流子输运特性 .
The carrier transport process of a hexagonal InN thin film grown on a semi-insulating GaAs (111) substrate by RF magnetron sputtering was studied by a dark current characteristic of 10-30 K at varying temperature , It is found that the conductivity of InN thin film depends on the height of the barrier barrier inside the material and the carrier transport property is determined by the accumulation of holes at the grain boundary.Based on the barrier height of the obtained InN thin film, The concentration of defects in InN thin films was estimated. The results are in good agreement with the experimental results of microscopic Raman scattering, which further illustrates that the barrier model of grain boundary is suitable for describing the carrier transport in InN films.