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This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al2O3 by metal-organic chemical vapour deposition.The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing.After implantation,a significant expansion is observed in the perpendicular direction.The lattice strain in perpendicular direction strongly depends on ion fluence and implantation geometry and can be partially relaxed by post-annealing.While in the parallel direction,the lattice parameter approximately keeps the same as the unimplanted GaN,which is independent of ion fluence,implantation geometry and post-annealing temperature.
This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al2O3 by metal-organic chemical vapor deposition. The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing. After implantation, a significant expansion is observed in the perpendicular direction. Lattice argument in perpendicular direction strongly depends on ion fluence and implantation geometry and can be partially relaxed by post-annealing. Whilst in the parallel direction, the lattice parameter approximately keeps the same as the unimplanted GaN, which is independent of ion fluence, implantation geometry and post-annealing temperature.