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We obtained the output characteristics in wurtzite Al0.15Ga0.85N/GaN MODFETs with the full band Monte Carlo method. The gate length Lg and the channel length Los in the device are 0.2 μm and 0.4 urn, respectively. In the output characteristics we found a differential negative resistance effect. That is, as VDS is a constant, initially, VDS increases with increasing VDS. When VDS exceeds a certain critical value, IDS decreases with increasing VDS. The analysis for velocity-field characteristics in wurtzite CaN, the distributions of the electric field and the electron velocity in the two dimensional electron gas channel indicates that the differential negative resistance effect of the electron average velocity results in the differential negative resistance effect of the output characteristics. The transient transport also is related to the differential negative resistance effect of the output characteristics. This effect only can be observed in the devices with very short channel.
We obtained the output characteristics in wurtzite Al0.15Ga0.85N / GaN MODFETs with the full band Monte Carlo method. The gate length Lg and the channel length Los in the device are 0.2 μm and 0.4 μm, respectively. In the output characteristics we found The VDS increases with increasing VDS. When VDS exceeds a certain critical value, IDS decreases with increasing VDS. The analysis for velocity-field characteristics in wurtzite CaN, the distributions of the electric field and the electron velocity in the two dimensional electron gas channel indicates that the differential negative resistance effect of the electron average velocity results in the differential negative resistance effect of the output characteristics. The transient transport also is related to the differential negative resistance effect of the output characteristics. This effect only can be observed in the devices with very short channel.