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采用连续离子层吸附反应(SILAR)法,通过500℃退火在玻璃衬底上制备出AgGaS2纳米薄膜。使用X射线衍射(XRD)、扫描电镜(SEM)、X射线能谱(EDS)、紫外可见(UV-Vis)谱和光致发光(PL)谱等对纳米薄膜的物相、形貌、化学配比和光学性能进行了定性和定量表征。XRD测试结果表明,实验获得产物为黄铜矿结构AgGaS2,并观测到(112)面和(224)面。使用Scherrer公式估算了AgGaS2产物的晶粒平均粒度大小约为30 nm。SEM观测到的AgGaS2纳米薄膜外形均匀一致,沉积紧密,薄膜沉积的纳米平均颗粒直径约为18～26 nm。EDS测试结果显示AgGaS2纳米薄膜中Ag、Ga和S三元素的原子相对百分含量为25.12%,26.66%和49.93%,其化学计量比几近于1:1:2物质的量比。通过紫外可见透过光谱得到截止波长为470.1 nm,禁带宽度为2.64 eV。室温PL测试发现发光中心在456 nm,与AgGaS2晶体发光中心相比产生了约40 nm的蓝移。以上结果充分表明SILAR法是一种制备AgGaS2纳米薄膜的有效方式。
AgGaS2 nanostructured thin films were prepared on glass substrate by continuous ion-layer adsorption reaction (SILAR) method at 500 ℃. The phase, morphology and chemical distribution of the nanofilms were characterized by XRD, SEM, EDS, UV-Vis and PL spectra The specific and optical properties were characterized qualitatively and quantitatively. The XRD results show that the obtained product is chalcopyrite AgGaS2 and the (112) and (224) planes are observed. The Scherrer formula was used to estimate the average grain size of AgGaS2 product about 30 nm. SEM observation of AgGaS2 nano-film uniform shape, deposition, the deposition of nano-particles average diameter of about 18 ~ 26 nm. The results of EDS showed that the relative atomic percentages of Ag, Ga and S in AgGaS2 nanofilms were 25.12%, 26.66% and 49.93%, and their stoichiometric ratios were close to that of 1: 1: 2. The cut-off wavelength was 470.1 nm and the forbidden band width was 2.64 eV by UV-vis transmission spectroscopy. The room temperature PL test found that the luminescence center is at 456 nm, resulting in a blue shift of about 40 nm compared to the AgGaS2 crystal luminescent center. The above results show that SILAR method is an effective way to prepare AgGaS2 nanofilms.