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用直流反应溅射方法在硅衬底上淀积了ZnO薄膜 ,测量它们的光致发光 (PL)光谱 ,观察到两个发光峰 ,峰值能量分别为 3 .18(紫外峰 ,UV)和 2 .3 8eV(绿峰 ) .样品用不同温度分别在氧气、氮气和空气中热处理后 ,测量了PL光谱中绿峰和紫外峰强度随热处理温度和气氛的变化 ,同时比较了用FP LMT方法计算的ZnO中几种本征缺陷的能级位置 .根据实验和能级计算的结果 ,推测出ZnO薄膜中的紫外峰与ZnO带边激子跃迁有关 ,而绿色发光主要来源于导带底到氧错位缺陷 (OZn)能级的跃迁 ,而不是通常认为的氧空位 (VO)、锌填隙 (Zni)或锌空位 (VZn)、氧填隙 (Oi) .
ZnO thin films were deposited on silicon substrates by DC reactive sputtering and their PL spectra were measured. Two luminescence peaks were observed with peak energies of 3.18 (UV, UV) and 2 .3 8eV (green peak) .The samples were treated with different temperatures in oxygen, nitrogen and air respectively, and then the intensity of green and UV peaks in PL spectra were measured with the heat treatment temperature and atmosphere, and the FP LMT method was used to calculate Of ZnO.According to the experimental and energy level calculation results, it is inferred that the UV peak in the ZnO thin film is related to the band-edge exciton transition of the ZnO band, and the green luminescence mainly comes from the conduction band bottom to the oxygen Instead of the commonly thought oxygen vacancy (VO), zinc interstitial (Zni) or zinc vacancy (VZn), oxygen interstitials (Oi), transitions of dislocation defects (OZn) are observed.