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采用射频磁控溅射法在玻璃衬底上低温制备出了镓掺杂氧化锌(ZnO:Ga)透明导电膜,研究了真空退火对薄膜结构、电学和光学特性的影响。结果表明:真空退火后,薄膜结构得到明显改善,电阻率由退火前的1.13×10-3?·cm下降到5.4×10-4?·cm,在可见光区的平均透过率也由未退火前的83%提高到退火后的90%以上。
The transparent conductive films of gallium-doped zinc oxide (ZnO: Ga) were prepared by RF magnetron sputtering at low temperature on glass substrates. The effects of vacuum annealing on the structure, electrical and optical properties of the films were investigated. The results show that the structure of the film is obviously improved after vacuum annealing, the resistivity decreases from 1.13 × 10-3? Cm before annealing to 5.4 × 10-4? Cm, and the average transmittance in the visible region is also from that of the unannealed The former 83% increased to more than 90% after annealing.