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宜普电源转换公司(EPC)宣布推出EPC2102(60V)及EPC2103(80V)增强型单片式氮化镓半桥器件。透过集成两个eGaN(?)功率场效应晶体管而成为单个器件可以除去印刷电路板上器件之间的相连电感及空隙,使晶体管的占板面积减少50%。这会提高效率(尤其是器件在更高频工作时)及增加功率密度并同时减低终端用户的功率转换系统的组装成本。半桥式器件是面向高频直流/直流转换应用的理想器件。在典型降压转换器采用EPC2103器件,在48V转12V、500kHz频率下开
EPC Power Conversion Corporation (EPC) announced the launch of the enhanced EPC2102 (60V) and EPC2103 (80V) monolithic GaN half-bridge devices. By integrating two eGaN (?) Power field-effect transistors into a single device, the connected inductances and voids between the devices on the printed circuit board can be removed, reducing the board area of the transistor by 50%. This increases efficiency (especially as the device operates at higher frequencies) and increases power density while reducing the cost of end-user power conversion system assembly. Half-bridge devices are ideal for high frequency DC / DC conversion applications. In the typical step-down converter using EPC2103 devices, 48V to 12V, 500kHz frequency