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本文概要报导我们ＨｇＣｄＴｅＭＢＥ上作的最近进展。一批面积２．０－１６．６ｃｍ２，组份ｘ０．１８８－０．３０，载流子浓度７．８１×１０１４～１．０×１０１６ｃｍ－３，迁移率１．０×１０４～１．４５×１０５ｃｍ２ｖ－１．ｓ－１和ｘ射线双晶衍射半峰宽（ＦＷＨＭ）６４～１００ａｒｃｓｅｃ的Ｎ型原生ＨｇＣｄＴｅ外延膜已经得到，某些参数已接近或达到国外报导的典型值，并在国内首先研制了直径为５０ｍｍ的ＨｇＣｄＴｅ外延膜。为了评价材料的特性，用一块Ｘ＝０．２４３的外延膜经适当热处理后研制了光伏探测器试验阵列，其最好的一元探测率Ｄλ＊＝２．４４×１０１０ｃｍＨｚ１／２Ｗ－１（λｃ＝７．９μｍ）。
This article provides an overview of recent advances in our HgCdTeMBE. A number of areas of 2.0-16.6cm2, component x0.188-0.30, carrier concentration of 7.81 × 1014 ~ 1.0 × 1016cm-3, the mobility of 1.0 × 104 ~ 1.45 × 105cm2v-1. s-1 and x-ray double-crystal diffraction FWHM 64 ~ 100arcsec N-type native HgCdTe epitaxial films have been obtained, some of the parameters have been close to or reach the typical value reported abroad, and the first in the country developed a diameter of 50mm HgCdTe epitaxial film. In order to evaluate the characteristics of the material, an experimental array of photovoltaic detectors was fabricated by using an epitaxial film with X = 0.243 after heat treatment. The best detection rate is λ = 2.44 × 1010cmHz1 / 2W-1 (λc = 7.9 μm).