在室温条件下采用离子辅助沉积技术在柔性衬底上依次制备无机缓冲层及In_2O_3:SnO_2(ITO)薄膜,重点研究了不同无机缓冲层对柔性ITO薄膜光电及耐弯曲性能的影响。研究发现SiO_2,TiO_2,Ta_2O_5和Al_2O_3无机缓冲层对ITO薄膜的方阻、光学透射比、耐弯曲性能等机电特性影响各异:添加SiO_2缓冲层的ITO薄膜其方阻变化率最大,方阻降低率达29.8%,而添加Al_2O_3缓冲层的ITO薄膜其方阻变化率最小,方阻降低率仅为5.6%;添加Ta_2O_5缓冲层的ITO薄膜其可见光透射比最佳,平均透射比达85%以上,而添加SiO_2缓冲层的ITO薄膜其可见光透射比最差,但其平均透射比也高于80%;SiO_2在耐弯曲半径上对ITO薄膜的改善效果比TiO_2更佳,而当ITO薄膜以弯曲半径R=0.8 cm和R=1.2 cm发生内弯时,SiO_2对ITO薄膜耐弯曲次数性能的改善效果不及TiO_2。 The inorganic buffer layer and In_2O_3: SnO_2 (ITO) thin film were sequentially prepared on the flexible substrate by ion-assisted deposition at room temperature. The effects of different inorganic buffer layers on the optoelectronic and flexural properties of flexible ITO thin films were investigated. The results show that the mechanical properties of ITO thin films such as square resistance, optical transmittance and bending resistance are different for SiO 2, TiO 2, Ta 2 O 5 and Al 2 O 3 inorganic buffer layers. The ITO films with SiO 2 buffer layer have the highest square resistance and the lowest square resistance Rate of 29.8%, while the addition of Al 2 O 3 buffer layer of the ITO film the lowest square resistance change, the square resistance reduction rate of only 5.6%; with Ta 2 O 5 buffer layer of ITO film the best visible light transmittance, the average transmittance of 85% or more , While the ITO film with SiO 2 buffer layer has the worst visible transmittance, but its average transmittance is also higher than 80%. SiO 2 has better effect on ITO film than TiO 2 in bend resistance radius, When the radius is R = 0.8 cm and R = 1.2 cm, the effect of SiO_2 on bending resistance of ITO thin film is not as good as TiO 2.