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讨论了MOCVD生长ZnO薄膜各种性质随氧流量的变化规律。固定锌源(DEZn)流量改变氧源(O2)流量,采用低压MOCVD在石英衬底上生长一组ZnO薄膜样品。由厚度测量、Raman散射、XRD表征表明,随O2流量增加,ZnO薄膜生长速率先提高后降低,碳杂质有所减少,晶体质量先提高后降低。PL显示,随O2流量增大带内深能级发光带强度逐步增强,带边发光峰强度也有较大变化,薄膜光学质量先提高后退化。霍尔测量表明,随氧流量增大,薄膜电阻率逐渐增加。实验表明不同氧流量对MOCVD生长的ZnO薄膜多种性质都有规律性影响。
The variation of various properties of ZnO films grown by MOCVD with oxygen flow was discussed. A fixed zinc source (DEZn) flow rate changes the oxygen source (O2) flow rate and a set of ZnO thin film samples are grown on quartz substrates using low pressure MOCVD. The results of thickness measurement, Raman scattering and XRD show that the growth rate of ZnO film first increases and then decreases with the increase of O2 flow rate, while the carbon impurity decreases and the crystal quality first increases and then decreases. PL shows that with the increase of O2 flow, the intensity of the light band in the deep-level band gradually increases and the peak intensity of the band edge also changes greatly. The optical quality of the film first increases and then degenerates. Hall measurements show that with the oxygen flow rate increases, the film resistivity gradually increased. Experiments show that different oxygen fluxes have a regular effect on the properties of ZnO thin films grown by MOCVD.