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通过射频等离子体增强化学气相沉积,在高气压条件下制备了微晶硅薄膜,并用拉曼光谱仪(Ram an)、扫描电镜(SEM)研究了微晶硅薄膜的微观结构。发现沉积速率在5Torr左右出现极大值,薄膜的晶化率随着沉积气压的升高而降低,薄膜表面的晶粒或团簇随着沉积气压的下降而增大,薄膜的粗糙度随着沉积气压的升高而降低。
The microcrystalline silicon thin films were prepared by radio frequency plasma enhanced chemical vapor deposition under high pressure. The microcrystalline silicon thin films were characterized by Raman spectroscopy and scanning electron microscopy (SEM). It is found that the maximum deposition rate appears at about 5Torr. The crystallization rate of the film decreases with the increase of the deposition pressure. The grains or clusters on the film surface increase with the decrease of the deposition pressure. The roughness of the film increases with Decreased deposition pressure.