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以Ar、CH_4和CO_2为反应气源,以三聚氰胺的甲醇饱和溶液为掺杂源,用微波等离子体化学气相沉积法在单晶硅基体上制备了掺氮的金刚石薄膜;用原子力显微镜、拉曼光谱以及霍尔效应测试仪等手段表征了膜的组成结构和半导体特性。结果表明:掺氮的金刚石薄膜晶粒平均尺寸约为20nm,表面粗糙度约为8.935nm,其拉曼光谱为典型的纳米金刚石膜特征峰形;掺氮膜材的电导率高达0.76×10~2Ω~(-1)cm~(-1),载流子浓度达到2.18×10~(19)/cm~3,是一种导电性能优良的n型半导体纳米金刚石膜。
Nitrogen-doped diamond films were prepared on single crystal silicon substrates by microwave plasma chemical vapor deposition using Ar, CH 4 and CO 2 as reactant gas sources and melamine saturated solution as doping source. The atomic force microscopy, Spectroscopy and Hall effect tester means the composition of the film structure and semiconductor properties. The results show that the average grain size of diamond - doped diamond films is about 20 nm and the surface roughness is about 8.935 nm. The Raman spectra of the diamond - like diamond films are typical peak shapes of nanocrystalline diamond films. The conductivity of nitrogen doped diamond films is as high as 0.76 × 10 ~ 2Ω ~ (-1) cm ~ (-1) and carrier concentration of 2.18 × 10 ~ (19) / cm ~ 3. It is an n-type semiconductor nanodiamond film with excellent electrical conductivity.