论文部分内容阅读
本研究的目的是从提高钯栅表面活性出发,探索克服钯栅的“起泡”效应,提高器件稳定性的措施。 我们采用半导体集成工艺,获得n沟道MDSFET,溅射厚500A的钯栅,然后在298℃流动空气中活化半小时,发现已活化的钯栅表面呈均匀致密活化层,经多次使用后未
The purpose of this study is to explore the surface activity of palladium grid to explore to overcome palladium palladium “bubble” effect and improve device stability measures. We use a semiconductor integrated process to obtain an n-channel MDSFET with a palladium gate sputtered at a thickness of 500A and then activated for half an hour at 298 ° C in flowing air. The surface of the activated palladium gate was found to be uniformly dense and activated after repeated use