This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory.Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase.The film holds a threshold current about 0.155 mA,which is smaller than the value 0.31 mA of Ge2Sb2Te5 film.Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at～180°C and changes to hexagonal structure at～270°C.Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method.Data retention of the films was characterized as well.