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采用金属有机化学气相沉积技术生长了GaN基多量子阱(MQW)蓝光发光二极管外延片,并采用高分辨率X射线衍射仪(HRXRD)和光致光谱仪(PL)表征晶体质量和光学性能,其他的光电性能由制成芯片后测试获得,目的是研究外延片p型AlGaN电子阻挡层Mg掺杂的优化条件。结果表明,在生长p型AlGaN电子阻挡层的Cp2Mg流量为300cm3/min时,蓝光发光二极管获得最小正向电压VF,而且在此掺杂流量下的多量子阱蓝光发光二极管芯片发光强度明显高于其他流量的样品。因此可以通过优化AlGaN电子阻挡层的掺杂浓度,来显著提高多量子阱蓝光发光二极管的电学性能和光学性能。
The GaN-based MQW (blue light-emitting diode) epitaxial wafers were grown by metal-organic chemical vapor deposition and the crystal quality and optical properties were characterized by high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) Optoelectronic properties obtained from the chip after the test, the purpose is to study epitaxial wafer p-type AlGaN electronic barrier Mg doping optimization conditions. The results show that the minimum forward voltage VF of the blue light emitting diode is obtained when the Cp2Mg flow rate of the p-type AlGaN electron-barrier layer is 300cm3 / min, and the emission intensity of the multi-quantum well blue light-emitting diode chip is obviously higher than Other flow samples. Therefore, by optimizing the doping concentration of the AlGaN electron blocking layer, the electrical and optical properties of the multi-quantum well blue light-emitting diode can be remarkably improved.