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根据光伏方法研究的半导体表面气体分子吸附机理 ,提出了硅单晶表面态真空敏感效应的机理模型 ,解释了表面态敏感型的真空传感器的各有关观测结果 .因此可以确认 ,硅单晶表面态对真空敏感的实质原因就是由于构成大气主要成份的氮气和氧气两种元素的电子亲和势相对于硅元素 ,具有明显不同的且符号相反的差值 ,导致吸附于硅表面的 N2 、O2 分子与硅表面态之间不同转移方向的电荷转移差值可以随真空度变化所引起的
Based on the molecular adsorption mechanism of semiconductor surface gas studied by photovoltaic method, a mechanism model of the vacuum sensitivity of the silicon single crystal surface state is proposed, and the related observations of the surface state sensitive vacuum sensor are explained. Therefore, it can be confirmed that the surface state of the silicon single crystal The essential reason for the vacuum is that the electron affinity of nitrogen and oxygen, which are the main components of the atmosphere, has markedly different and opposite sign differences with respect to the silicon element, resulting in the adsorption of N2 and O2 molecules on the silicon surface Differences in charge transfer between silicon surface state and different transfer directions can be caused by changes in the degree of vacuum