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通过建立半绝缘 Ga As光导开关 (PCSS’s)的瞬态二维模型 ,获得了不同偏置条件下器件内电场、电流密度等电参量的空间分布及器件中最大电场和输出电流随时间的变化关系 .所获得的主要特性与实验观察到的现象和变化规律相符 :当偏置电压较低时 ,器件工作于线性模式 ;当偏置电压达到某一数值后 ,通过器件的电流呈现出非线性的传导特性 .并阐述了器件的工作模式与偏置电压的关系 ,解释了不同偏置电压下呈现不同工作模式的主要原因及物理本质
Through the establishment of transient two-dimensional model of semi-insulating Ga As photoconductive switch (PCSS’s), the spatial distribution of electrical parameters such as electric field and current density under different bias conditions and the relationship between the maximum electric field and output current in the device over time are obtained . The main characteristics obtained are consistent with experimentally observed phenomena and variations: when the bias voltage is low, the device operates in linear mode; when the bias voltage reaches a certain value, the current through the device appears nonlinear And describes the relationship between the operating mode of the device and the bias voltage and explains the main causes and physical essence of different operating modes under different bias voltages