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二硫化钼(MoS2)是已知的二维半导体材料中光电性能最优秀的材料之一.单原子层厚的MoS2是禁带宽度为1.8 eV的二维直接带隙半导体材料,可以用来发展新型的纳米电子器件和光电功能器件.本论文利用玻尔兹曼平衡方程输运理论研究低温时MoS2系统的电输运性质,计算得到了MoS2电子迁移率的解析表达式.研究发现,低温时MoS2的迁移率与衬底材料的介电常数的平方成正比;与系统的电子浓度对带电杂质的浓度的比率ne/ni成线性关系.因此,选用介电常数高的衬底材料,适当提高MoS2系统的载流子浓度,同时降低杂质的浓度,可以有效提高MoS2系统的迁移率.研究结果为探索以MoS2为基础的新型纳米光电器件的研究和实际应用提供了理论依据.
MoS2 is one of the best two-dimensional semiconducting materials known for photoemission properties.MoS2 with a monolayer thickness is a two-dimensional direct bandgap semiconductor material with a forbidden band width of 1.8 eV and can be used to develop Novel nanoelectronic devices and optoelectronic functional devices.In this thesis, the transport theory of Boltzmann equilibrium equation is used to study the electrical transport properties of MoS2 system at low temperature, and the analytical expression of MoS2 electron mobility is calculated.It is found that at low temperature The mobility of MoS2 is proportional to the square of the dielectric constant of the substrate material and to the ratio ne / ni of the electron concentration of the system to the concentration of charged impurities. Therefore, the choice of a substrate material with a high dielectric constant is appropriately increased MoS2 system can reduce the impurity concentration and improve the mobility of MoS2 system effectively.The research results provide a theoretical basis for exploring the research and practical application of new MoS2-based nanoelectronic devices.