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在分析碱性Cu化学机械抛光液作用机理的基础上,考察了抛光液对铜晶圆电化学、表面形态、化学机械抛光去除速率等性能。结果发现:选用新研制的络合剂R(NH2)n,将Cu的氧化物、氢氧化物转化为可溶性络合Cu,实现了碱性抛光液中Cu的去除。同时发现,随着碱性抛光液质量分数的增加,淀积Cu层不仅易被腐蚀,腐蚀速率也有所增加,并且当抛光液质量分数达到63.7%(Cu3),会对Cu的腐蚀起到抑制作用。抛光后表面形态分析说明此碱性化学机械抛光液能有效改善晶圆表面粗糙度,且对Cu层平均去除速率是酸性商用抛光液的4～5倍。
Based on the analysis of mechanism of action of alkaline Cu chemical mechanical polishing solution, the effects of polishing solution on electrochemical properties of copper wafer, such as surface morphology, chemical mechanical polishing removal rate and so on were investigated. The results showed that Cu (superscript 2 +) and Cu (superscript 2 +) were converted into soluble complex Cu by using the newly developed complexing agent R (NH2) n, and the removal of Cu in alkaline polishing solution was achieved. It is also found that with the increase of mass fraction of alkaline polishing solution, the deposition of Cu layer is not only easy to be corroded, but also the corrosion rate is increased. When the mass fraction of polishing solution reaches 63.7% (Cu3), Cu corrosion will be restrained effect. The analysis of the surface morphology after polishing shows that this alkaline chemical mechanical polishing solution can effectively improve the surface roughness of the wafer and the average removal rate of Cu layer is 4 to 5 times that of acidic commercial polishing solution.