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研究了在2.2 Pa低真空条件下用直流溅射法制备的银薄膜的电阻率特性和薄膜结构.实验表明,薄膜厚度对薄膜电阻率有显著影响,随膜厚的增加薄膜电阻率降低,在膜厚大于200 nm时趋于稳定,电阻率为2.54×10-8Ω.m.薄膜表面和晶粒间界对传导电子的散射导致了银薄膜电阻率的尺寸效应.研究结果表明,可以在2.2 Pa的低真空条件下制备金属银薄膜,将银靶用于目前大学物理实验课中金属薄膜制备及金属薄膜电阻率测量实验是可行的.
The resistivity and thin film structure of silver thin films prepared by direct current sputtering at low pressure of 2.2 Pa were studied.The experimental results show that the film thickness has a significant effect on the resistivity of the thin films and the resistivity of the thin films decreases with the increase of the film thickness. When the film thickness is greater than 200 nm, it tends to be stable and the resistivity is 2.54 × 10-8Ω.m. The scattering of conducting electrons on the film surface and the grain boundary leads to the size effect of the silver thin film resistivity.The results show that, Pa prepared under low vacuum metal silver film, the silver target for the current university physics experiment in the preparation of metal thin film and metal film resistivity measurement experiment is feasible.