本文报告了采用全离子注入技术制作的p~+n平面型结构的Ge-APD,保护环注Be~+,P+层注B~+(或In~+)形成.测量结果表明,击穿电压Vs在37至50伏,光敏面直径为90μm,在0.9V_B下,带尾纤的探测器暗电流可小至0.15μA,典型值为0.2至0.5μA,光电流倍增因子M在 12至 17,M=10时,过剩噪声因子 F<10,光响应度大于 0.5A/W. In this paper, Ge-APD with p ~ + n planar structure fabricated by all-ion implantation technology is reported, and the formation of B ~ + (or In ~ +) With a Vs of 37 to 50 volts and a photosensitive facet diameter of 90 μm, pigtailed detector dark currents of as small as 0.15 μA, typical values ​​of 0.2 to 0.5 μA, photocurrent multiplier M of 12 to 17 at 0.9 V_B, When M = 10, the excess noise factor F <10 and the optical responsivity greater than 0.5A / W.